IXFH15N80Q |
RFQ for IXFH15N80Q Required Field |
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| Technical/Catalog Information | IXFH15N80Q |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 4300pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 90nC @ 10V |
| Package / Case | TO-247AD |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFH15N80Q IXFH15N80Q |
| Product | Manufacturers | Pack | D/C |
| IXFH15N80Q | - | TO-3P | 04+ |
Typical Application |
Features |
| • Easy to mount• Space savings• High power density | • IXYS advanced low Qg process• International standard packages• Low RDS (on)• Unclamped Inductive Switching (UIS) rated• Fast switching• Molding epoxies meet UL 94 V-0 flammability classification |
| Symbol | Test Conditions | Maximum | Ratings |
| VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
800 800 |
V V |
| VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
| ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
15 60 15 |
A A A |
|
EAR |
TC = 25°C TC = 25°C |
30 1.0 |
mJ |
| dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 | V/ns |
| PD | TC = 25°C | 300 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
| Md |
Mounting torque |
1.13/10 |
Nm/lb.in. Nm/lb.in. |
| Weight | TO-247 TO-268 |
6 4 |
g g |
